RJK03M9DNS
RJK03M9DNS is Silicon N Channel Power MOS FET manufactured by Renesas.
Silicon N Channel Power MOS FET Power Switching
Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 9.2 m typ. (at VGS = 10 V)
- Pb-free
- Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 78
Preliminary Datasheet
R07DS0775EJ0120 Rev.1.20
May 29, 2012
5 678 D DDD
4 321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1...
