Renesas Electronics HAF2021
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area.| Part No. | HAF2021 |
|---|---|
| Datasheet | HAF2021 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel MOSFET Series Power Switching |
| Buy | Stock & Price |
DESCRIPTION
And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.FEATURES
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● Logic level operation (6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 G 4 Gate resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 1 2 1. Gate 2. Drain 3. Source 4. Drain 3 2 S 3 Rev.2.00, Mar.05.2004, page 1 of 8 HAF2021(L), HAF2021(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings 60 16 –2.5 50 100 50 100 150 –55 to +1...
