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NE5550279A - Silicon Power LDMOS FET

Key Features

  • High Output Power.
  • High power added efficiency.
  • High Linear gain.
  • High ESD tolerance : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm).
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Datasheet Details

Part number NE5550279A
Manufacturer Renesas
File Size 382.36 KB
Description Silicon Power LDMOS FET
Datasheet download datasheet NE5550279A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • High Linear gain • High ESD tolerance : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) • Suitable for VHF to UHF-BAND Class-AB power amplifier.