NE5550979A
NE5550979A is manufactured by Renesas.
Data Sheet
Silicon Power LDMOS FET
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Features
- High Output Power
: Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
- High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
- High Linear gain
: GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
- High ESD tolerance
: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
- Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
- 150 MHz Band Radio System
- 460 MHz Band Radio System
- 900 MHz Band Radio System
ORDERING INFORMATION
Part Number NE5550979A
Order Number...
