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NE5550779A Datasheet Silicon Power Ldmos Fet

Manufacturer: Renesas

Overview: Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.

Key Features

  • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
  • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm).
  • High ESD tolerance.
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.

NE5550779A Distributor

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