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NP80N06CLD - N-CHANNEL POWER MOS FET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel Temperature 175 degree rated.
  • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX. ) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX. ) (VGS = 5 V, ID = 40 A).
  • Low Ciss : Ciss = 2360 pF (TYP. ).
  • Built-in Gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.