Datasheet4U Logo Datasheet4U.com

RJH30H1DPP-M0 Datasheet High Speed Power Switching

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power.

Key Features

  • Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ. , trr = 23 ns typ. Isolated package: TO-220FL R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Outline.

More Datasheets from Renesas

Part Number Description
RJH30H2DPK-M0 High Speed Power Switching
RJH1BF6RDPQ-80 High Speed Power Switching
RJH1BF7RDPQ-80 High Speed Power Switching
RJH1CD5DPQ-A0 High Speed Power Switching
RJH1CD5DPQ-E0 IGBT
RJH1CD6DPQ-A0 IGBT
RJH1CD6DPQ-E0 IGBT
RJH1CD7DPQ-A0 IGBT
RJH1CD7DPQ-E0 IGBT
RJH1CF4RDPQ-80 High Speed Power Switching

RJH30H1DPP-M0 Distributor