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RJH30H1DPP-M0 - High Speed Power Switching

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Description

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Features

  • Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ. , trr = 23 ns typ. Isolated package: TO-220FL R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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Datasheet Details

Part number RJH30H1DPP-M0
Manufacturer Renesas
File Size 212.43 KB
Description High Speed Power Switching
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Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features       Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ. Isolated package: TO-220FL R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 www.DataSheet.
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