RJH30H1DPP-M0 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High speed power switching Features - - - - - - Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ. Isolated package: TO-220FL R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1. Gate 2. Collector 3. Emitter 2 3 .DataSheet.net/...