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RJH30H2DPK-M0 Datasheet High Speed Power Switching

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power.

Key Features

  • Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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