RJH30H2DPK-M0 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High speed power switching Features - - - - - Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) .DataSheet.net/...