RJH30H2DPK-M0 - High Speed Power Switching

Product Overview

Renesas

Datasheet Details

Part number	RJH30H2DPK-M0
Manufacturer	Renesas
File Size	212.20 KB
Description	High Speed Power Switching
Datasheet	RJH30H2DPK-M0 Datasheet
Additional preview pages of the RJH30H2DPK-M0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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Published: Jul 20, 2012 |