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RJK2017DPP-M0 - MOSFET

General Description

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Key Features

  • Low on-resistance RDS(on) = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID Note4 ID (pulse) Note1 IDR IAP Note3 EAR Note3 Pch Note2 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C 4.