RJK2061JPE
RJK2061JPE is N-Channel Power MOSFET manufactured by Renesas.
Features
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- - For Automotive application AEC-Q101 pliant Low on-resistance : RDS(on) = 55 mΩ typ. Low input capacitance : Ciss = 1850 p F typ R07DS0369EJ0100 Rev.1.00 May 12, 2011
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4 2, 4 D
1 G 3
1. 2. 3. 4.
Gate Drain Source Drain
S 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 pliant
.Data Sheet.co.kr
(Ta = 25°C)
Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note2 EAR Note2 Pch Note3 Tch Note4 Tstg Value 200 ±20 40 160 40 160 15 15 150 175
- 55 to +150 Unit V V A A A A A m J W °C °C
Thermal Impedance Characteristics
- Channel to case thermal impedance θch-c: 1.0°C/W
R07DS0369EJ0100 Rev.1.00 May 12, 2011
Page 1 of 6
Datasheet pdf
- http://..net/
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol IGSS IDSS VGS(off) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min
- - 2.5
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- Typ
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- 55 2100 385 65 32 9.5 4 17 3.5 45 5 0.9 155 Max ±10 10 3.5 75
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