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RJK2061JPE - N-Channel Power MOSFET

General Description

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Key Features

  • For Automotive.

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet RJK2061JPE Silicon N Channel MOS FET High Speed Power Switching Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 55 mΩ typ. Low input capacitance : Ciss = 1850 pF typ R07DS0369EJ0100 Rev.1.00 May 12, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 2, 4 D 1 2 1 G 3 1. 2. 3. 4. Gate Drain Source Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4.