The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
RJK2017DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1797-0200 Rev.2.00 Aug 26, 2009
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
2 3
S
www.DataSheet.co.kr
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4.