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RJK2054DPC
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.075 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting REJ03G1868-0100 Rev.1.00 Dec 08, 2009
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S) 2(S) 3(S) 4(G)
5 6 7 8 D D D D
K2 05 4
8(D) 7(D) 6(D) 5(D)
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
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Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
RJK2054DPC Datasheet
