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RJK2054DPC - N-Channel Power MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.075 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25°C).
  • Low drive current.
  • High density mounting REJ03G1868-0100 Rev.1.00 Dec 08, 2009 Outline.

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RJK2054DPC Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075 Ω typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting REJ03G1868-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 5 6 7 8 D D D D K2 05 4 8(D) 7(D) 6(D) 5(D) 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.