HAT2282C Description
HAT2282C Silicon N Channel MOS FET Power Switching.
HAT2282C Key Features
- Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V)
- Low drive current
- High density mounting
- 2.5 V gate drive device
- Part: HAT2282C
- Manufacturer: Renesas (official site)
- Size: 73.62 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| HAT2281C | Silicon N-Channel Power MOSFET |
| HAT2285WP | Silicon N-Channel Power MOSFET |
| HAT2287WP | Silicon N-Channel Power MOSFET |
| HAT2200R | Silicon N-Channel Power MOSFET |
| HAT2200WP | Silicon N-Channel Power MOSFET |