ROHM Semiconductor S6307
SiC Schottky Barrier Diode
| Part No. | S6307 |
|---|---|
| Datasheet | S6307 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | SiC Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible●Inner Circuit
●Construction Silicon carbide epitaxial planar type Schottky diode Datasheet
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ABSOLUTE MAXIMUM RATINGS
(Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM *2 ∫i2d*t2 190 140 780 195 109 Junction temperature Tj 175 Range of storage temperature Tstg 55 to 175 *1 Limited by Tj *2 Assumes Zth(j-a) of 0.36 °C/W or less. (Pulse Width = 8.3ms) Unit V V A A A A A2s A2s °C °C © 2017 ROHM Co., Ltd. All rights reserved. 1/4 2017.12 - Rev.A S6307 Datasheet●Electrical characteristics (Tj = 2
