US5U1 Datasheet PDF

US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) TUMT5 2.0 1.3 0.65 0.65 0.85Max. 0.77 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U01 zApplications Switching zPackage specifications Package Type US5U1 ∗2 zInner circuit Taping TR 3000 (5) (4) Code Basic ordering unit (pieces) ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Power dissipation Channel temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch ∗2...