US5U2 Datasheet PDF

Transistors 4V Drive Nch+SBD MOSFET US5U2 US5U2 0.2Max. zStructure Silicon N-channel MOSFET / Schottky barrier diode zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. zApplications Switching zPackaging specifications Type US5U2 Package Code Basic ordering unit (pieces) Taping TR 3000 zDimensions (Unit : mm) TUMT5 2.0 1.3 Abbreviated symbol : U02 zInner circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3) (3)Anode (4)Cathode (5)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Power dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Channel temperature Tch ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Limits 30 20 ±1.4 ±5.6 0.6 5.6 0.7 150 Unit V V A A A A W / ELEMENT °C Rev.B 1/4 Tra...