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RU1H190S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1H190S
Manufacturer Ruichips
File Size 405.41 KB
Description N-Channel Advanced Power MOSFET
Download RU1H190S Download (PDF)

General Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– NOV., 2011 Rating 100 ±25 175 -55 to 175 190 ① 720 ② 190 ② 120 250 125 0.55 Unit V °C °C A A A W °C/W 1240 mJ www.ruichips.com RU1H190S Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H190S Unit Min.

Typ.

Overview

RU1H190S N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

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