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RU1H60R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU1H60R N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU1H60R
Manufacturer Ruichips
File Size 333.61 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU1H60R-Ruichips.pdf

General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright Ruichips Semiconductor Co., Ltd Rev.

B– DEC., 2012 Rating 100 ±20 175 -55 to 175 ① 60 ② 240 ① 60 39 120 60 1.25 Unit V °C °C A A A W W °C/W 169 mJ .ruichips.

RU1H60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H60R Unit Min.

Key Features

  • 100V/60A, RDS (ON) =17 mΩ(Typ. )@VGS=10V RDS (ON) =18.5 mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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RU1H60R Distributor