RU1HC2H
RU1HC2H is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ.) @ VGS=4.5V
- P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ.) @ VGS=-10V RDS (ON) =175mΩ (Typ.) @ VGS=-4.5V
- Reliable and Rugged
- ESD Protected
- Lead Free and Green Available
Applications
- Power Management in Notebook puter.
Pin Description
SOP-8
Absolute Maximum Ratings plementary MOSFET
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG IS
Storage Temperature Range Diode Continuous Forward Current TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested TA=25°C
②
RθJA
Continuous Drain Current (VGS=±10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
N -Channel P Channel
100 ±20 150 -55 to 150 3.5
-100 ±20 150 -55...
