• Part: MMBTSC2712
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: SEMTECH
  • Size: 264.50 KB
Download MMBTSC2712 Datasheet PDF
SEMTECH
MMBTSC2712
MMBTSC2712 is NPN Transistor manufactured by SEMTECH.
Features ․High voltage and high current: VCEO=50V, IC=150m A(max) ․High h FE: h FE=70~700 ․Low noise: NF=1d B(typ.), 10d B(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 200 125 -55 to +125 Unit V V V m A m A m W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=2m A O Y G L Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100m A, IB=10m A Transition Frequency at VCE=10V, IC=1m A Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1m A, f=1KHz, Rg=10KΩ NF 1 Cob 2 f T 80 VCE(sat) IEBO ICBO h FE h FE h FE h FE 70 120 200 350 Min. Typ. .. Max. 140 240 400 700 0.1 0.1 0.25 3.5 10 Unit µA µA V MHz p F d B SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 - VCE 240 6.0 5.0 3.0 2.0 160 Collector power dissipation, m W .. P c - Ta mon emitter Ta=25 C 250 200 Ic - m A 80 IB=0.2m A 0 4 - V h FE - I C 3000 1000 mon emitter VCE=1V VCE=6V 3 Ta (...