SST34HF1641J Overview
Key Features
- Dual-Bank Architecture for Concurrent Read/Write Operation – Bottom Sector Protection – 16 Mbit: 12 Mbit + 4 Mbit
- PSRAM Organization: – 4 Mbit: 256K x16 – 8 Mbit: 512K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
- Low Power Consumption: – Active Current: 25 mA (typical) – PSRAM Standby Current: 40 µA (typical)
- Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array
- Sector-Erase Capability – Uniform 2 KWord sectors
- Block-Erase Capability – Uniform 32 KWord blocks
- Read Access Time – Flash: 70 ns – PSRAM: 70 ns
- Erase-Suspend / Erase-Resume Capabilities
