SST34HF1681 Overview
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF16x1A and SST34HF1681 devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low...
SST34HF1681 Key Features
- Flash Organization: 1M x16
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 16 Mbit: 12 Mbit + 4 Mbit
- SRAM Organization
- 2 Mbit: 128K x16
- 4 Mbit: 256K x16
- 8 Mbit: 512K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
