SST34HF1681J Overview
These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF16x1J devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small...
SST34HF1681J Key Features
- Flash Organization: 1M x16 or 2M x8
- Dual-Bank Architecture for Concurrent Read/Write Operation
- Bottom Sector Protection
- 16 Mbit: 12 Mbit + 4 Mbit
- PSRAM Organization
- 4 Mbit: 256K x16
- 8 Mbit: 512K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
