SST34HF1681D Overview
These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF16x1C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and...
SST34HF1681D Key Features
- Flash Organization: 1M x16 or 2M x8
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 16 Mbit: 12 Mbit + 4 Mbit
- (P)SRAM Organization
- 2 Mbit: 128K x16 or 256K x8
- 4 Mbit: 256K x16 or 512K x8
- 8 Mbit: 512K x16 or 1024K x8
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
