SST34HF1681 Description
The SST34HF1681 boMemory devices integrate a 1M x16 CMOS flash memory bank with a 512K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches. The SST34HF1681...
SST34HF1681 Key Features
- Flash Organization: 1M x16
- Dual-Bank Architecture for Concurrent Read/Write Operation
- 16 Mbit: 12 Mbit + 4 Mbit
- SRAM Organization
- 8 Mbit: 512K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption