SST34HF164G Overview
Key Features
- Flash Organization: 1M x16 – 16 Mbit: 12 Mbit + 4 Mbit
- Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash
- SRAM Organization: – 2 Mbit:128K x16 – 4 Mbit: 256K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
- Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array
- Sector-Erase Capability – Uniform 2 KWord sectors
- Block-Erase Capability – Uniform 32 KWord blocks
- Read Access Time – Flash: 70 ns – SRAM: 70 ns
- Erase-Suspend / Erase-Resume Capabilities
