SST34HF164G Overview
The SST34HF16xG boMemory devices integrate a 1M x16 CMOS flash memory bank with either 128K x16 or 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability pared with alternate approaches....
SST34HF164G Key Features
- Flash Organization: 1M x16
- 16 Mbit: 12 Mbit + 4 Mbit
- Concurrent Operation
- Read from or Write to SRAM while Erase/Program Flash
- SRAM Organization
- 2 Mbit:128K x16
- 4 Mbit: 256K x16
- Single 2.7-3.3V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
