The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications.
The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A.
| Part number | DB-900-80W |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 238.86 KB |
| Description | RF Power Amplifier Demoboard |
| Datasheet |
 DB-900-80W Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| DB-2933-54 | RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs | STMicroelectronics |
| DB-3 | Silicon Bidirectional DIAC | Semtech Corporation |
| DB-4 | Bi-directional trigger diodes | Leshan Radio Company |
| DB-54003-470 | RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs | STMicroelectronics |
| DB-54003-470 | HF to 2000 MHz Class AB Common Source | ETC |
| Part Number | Description |
|---|---|
| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor |
| DB-55008L-318 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-55008L-450 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-55015-490 | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs |
| DB-85015-940 | RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
