Datasheet Details
| Part number | DB-900-80W |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 238.86 KB |
| Description | RF Power Amplifier Demoboard |
| Datasheet | DB-900-80W_STMicroelectronics.pdf |
|
|
Overview: DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.
| Part number | DB-900-80W |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 238.86 KB |
| Description | RF Power Amplifier Demoboard |
| Datasheet | DB-900-80W_STMicroelectronics.pdf |
|
|
|
The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications.
The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A.
(www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.
| Part Number | Description |
|---|---|
| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor |
| DB-55008L-318 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-55008L-450 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
| DB-55015-490 | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs |
| DB-85015-940 | RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs |