M59BW102 - 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory

The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply.

For Program and Erase operations the necessary high voltages are generated internally.

• an interleaved access modality which allows extremely fast access time. The device is offered in TSOP40 (10 x 14mm) package. Figure 1. Logic Diagram VCC 16 A0-A15 W E G ALE M59BW102 16 DQ0-DQ15 VSS AI02763B March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/24 M59BW102 Figure 2. TSOP Connections Table 1. Signal Names A0-A15 DQ0-DQ7 Address Inputs Data Inputs/Outputs, Command Inputs Data.