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M59MR032C M59MR032D
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read
s s
– VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Configurable Burst mode Read – Page mode Read (4 Words Page) – Random Access: 100ns
LFBGA54 (ZC) 10 x 4 ball array µBGA46 (GC) 10 x 4 ball array
BGA
µBGA
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PROGRAMMING TIME – 10µs by Word typical – Double Word Programming Option
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MEMORY BLOCKS – Dual Bank Memory Array: 8 Mbit - 24 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.