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M59MR032C - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

General Description

The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.0V V DD supply for the circuitry.

For Program and Erase operations the necessary high voltages are generated internally.

Key Features

  • asymmetrically blocked architecture. M59MR032 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. The memory also features an erase suspend allowing to read or program in another block within the same bank. Once suspended the erase can be resumed. The Bank Size and Sectorization are summarized in Table 8. Parameter Blocks are located at the top of the memor.

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Datasheet Details

Part number M59MR032C
Manufacturer STMicroelectronics
File Size 352.16 KB
Description 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Datasheet download datasheet M59MR032C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M59MR032C M59MR032D 32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Configurable Burst mode Read – Page mode Read (4 Words Page) – Random Access: 100ns LFBGA54 (ZC) 10 x 4 ball array µBGA46 (GC) 10 x 4 ball array BGA µBGA s PROGRAMMING TIME – 10µs by Word typical – Double Word Programming Option s MEMORY BLOCKS – Dual Bank Memory Array: 8 Mbit - 24 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.