M59DR032B - 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory

The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V V DD supply for the circuitry.

For Program and Erase operations the necessary high voltages are generated internally.

• asymmetrically blocked architecture. M59DR032 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. The memory also features an erase suspend allowing to read or program in another block within the same bank. Once suspended the erase can be resumed. The Bank Size and Sectorization are summarized in Table 7. Parameter Blocks are located at the top of the memor.