STB3NC60 datasheet by STMicroelectronics.
| Part number | STB3NC60 |
|---|---|
| Datasheet | STB3NC60_STMicroelectronics.pdf |
| File Size | 173.18 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
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The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. Unit V µA µA nA Zero Gate Voltage VDS = Max Rating Drain Current (V GS = 0) VDS = Max Rating Gate-body Leakage Current (V DS = 0) VGS = ± 30 V T c = 125 o...
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