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STB3NC60 - N-CHANNEL Power MOSFET

Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .

area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

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Datasheet preview – STB3NC60

Datasheet Details

Part number STB3NC60
Manufacturer STMicroelectronics
File Size 173.18 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STB3NC60 Datasheet
Additional preview pages of the STB3NC60 datasheet.

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Full PDF Text Transcription

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® STB3NC60 N - CHANNEL 600V - 3.3Ω - 3A - D2PAK/I2PAK PowerMESH™ ΙΙ MOSFET TYPE STB3NC60 ν ν ν ν ν VDSS 600 V R DS(on) < 3.6 Ω ID 3A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
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