STB3NC60 Datasheet | STMicroelectronics

Power MESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ν SWITCH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ν I2PAK TO-262 (Suffix "-1") D2PAK TO-263 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( - ) P tot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 600 600 ± 30 3 1.9 12 80 0.64 4 -65 to 150 150 (1) ISD ≤3A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o (- ) Pulse width limited by safe operating area February 2000 1/9 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1.56 62.5 0.5 300 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = IAR , VDD = 50 V) Max Value 3 100 Unit A m J ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF Symbol V(BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µ A V GS = 0 Min. 600 1 50 ± 100 Typ. Max. Unit V µA µA n A Zero Gate Voltage VDS = Max Rating Drain Current (V GS = 0) VDS = Max Rating Gate-body...