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STGB20NB37LZ Datasheet N-CHANNEL IGBT

Manufacturer: STMicroelectronics

General Description

Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances.

The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( • ) E AS P tot E SD T s tg Tj Parameter Collector-Emitter Voltage (V GS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25 o C Collector Current (continuous) at Tc = 100 o C Collector Current (pulsed) Single Pulse Energy Tc = 25 o C T otal Dissipation at Tc = 25 o C Derating Factor ESD (Human Body Model) Storage Temperature Max.

Overview

® STGB20NB37LZ N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT PRELIMINARY DATA TYPE STGB20NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 2.