STGB20NB37LZ Datasheet | STMicroelectronics

® N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED Power MESH™ IGBT PRELIMINARY DATA TYPE STGB20NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 2.0 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM...