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STN456DN - N-Channel Enhancement Mode MOSFET

General Description

STN456DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Datasheet Details

Part number STN456DN
Manufacturer STANSON
File Size 0.97 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN456DN Datasheet

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STN456DN N Channel Enhancement Mode MOSFET 70A DESCRIPTION STN456DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION POWER PACK 5x6 (1212-8L) DD DD FEATURE l 30V/30A, RDS(ON) = 4.0mΩ(Typ.) @VGS = 10V l 30V/15A, RDS(ON) = 5.8mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 (1212-8L) package design S S SG Y:Year Code A:Date Code B:Package Code C:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp.