STANSON STN456DN
N-Channel Enhancement Mode MOSFET
| Part No. | STN456DN |
|---|---|
| Datasheet | STN456DN Download |
| Manufacturer |  STANSON |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
STN456DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION POWER PACK 5x6 (1212-8L) DD DD FEATURE l 30V/30A, RDS(ON) = 4.0mΩ（Typ.） @VGS = 10V l 30V/15A, RDS(ON) = 5.8mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 (1212-8L) package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp. STN456DN 2016 V1 STN456DN N Channel Enhancement Mode MOSFET 70A ABSOULTEMAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 35 21 70 Continuous Source Curren...
