STN488DN Overview
STN488DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
STN488DN Key Features
- 40V/25A, RDS(ON) = 2.2mΩ @VGS = 10V
- 40V/12A, RDS(ON) = 2.6mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- PPAK5x6 package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code STANSON TECHNOLOGY 120 B