STN4826 Datasheet | Stanson

Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE 60V/ 8.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/6.0A, RDS(ON) = 40mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability...