The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STN4826 |
|---|---|
| Manufacturer | Stanson |
| File Size | 673.36 KB |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Datasheet |
 STN4826 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STN4822 | MOSFET | Stanson Technology |
| STN4828 | 10A Dual N-Channel Enhancement Mode MOSFET | Stanson Technology |
| STN4842 | Dual N-Channel Enhancement Mode MOSFET | Semtron |
| STN484D | MOSFET | Stanson Technology |
| STN4102 | MOSFET | Stanson Technology |
| Part Number | Description |
|---|---|
| STN4850 | N-Channel Enhancement Mode MOSFET |
| STN488DN | N-Channel Enhancement Mode MOSFET |
| STN4260 | 18A N-Channel Enhancement Mode MOSFET |
| STN4346 | 6.8A N-Channel Enhancement Mode MOSFET |
| STN4392 | N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
