STN4826 datasheet by Stanson.
| Part number | STN4826 |
|---|---|
| Datasheet | STN4826-Stanson.pdf |
| File Size | 673.36 KB |
| Manufacturer | Stanson |
| Description | Dual N-Channel Enhancement Mode MOSFET |
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The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
| Part Number | Description |
|---|---|
| STN4850 | N-Channel Enhancement Mode MOSFET |
| STN488DN | N-Channel Enhancement Mode MOSFET |
| STN4260 | 18A N-Channel Enhancement Mode MOSFET |
| STN4346 | 6.8A N-Channel Enhancement Mode MOSFET |
| STN4392 | N-Channel Enhancement Mode MOSFET |
| STN442D | N-Channel Enhancement Mode MOSFET |
| STN4438 | N-Channel Enhancement Mode MOSFET |
| STN444DN | N-Channel Enhancement Mode MOSFET |
| STN456DN | N-Channel Enhancement Mode MOSFET |
| STN210D | N-Channel Enhancement Mode MOSFET |
