STN7120DN Datasheet | STANSON

N Channel Enhancement Mode MOSFET 50A DESCRIPTION STN7120DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION POWER PACK 5x6 DD DD FEATURE l 60V/10A, RDS(ON) = 12mΩ @VGS = 10V 60V/8A, RDS(ON) = 15mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2009, Stanson Corp. STN7120DN 2017 V1 N Channel Enhancement Mode MOSFET 50A Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID ±20 50 31 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃...