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2N2907AHR - PNP Transistor

General Description

The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Key Features

  • VCBO IC(max. ) 60 V ESCC.
  • Hermetic packages.
  • ESCC qualified.
  • 100 krad 0.5 A HFE at 10 V, 150 mA > 100 Tj(max. ) 200 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2907AHR Datasheet Rad-hard 60 V, 0.6 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10460 Product status link 2N2907AHR Features VCBO IC(max.) 60 V ESCC • Hermetic packages • ESCC qualified • 100 krad 0.5 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.