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2N2907AHR Datasheet PNP Transistor

Manufacturer: STMicroelectronics

Overview: 2N2907AHR Datasheet Rad-hard 60 V, 0.6 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid.

General Description

The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.

In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

Key Features

  • VCBO IC(max. ) 60 V ESCC.
  • Hermetic packages.
  • ESCC qualified.
  • 100 krad 0.5 A HFE at 10 V, 150 mA > 100 Tj(max. ) 200 °C.

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