STMicroelectronics 2N2907AHR
The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).| Part No. | 2N2907AHR |
|---|---|
| Datasheet | 2N2907AHR Download |
| Manufacturer |  STMicroelectronics |
| Description | Rad-hard 60V 0.6A PNP transistor |
| Buy | Stock & Price |
FEATURES
VCBO 60 V IC(max.) ESCC 0.5 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C● Hermetic packages
● ESCC qualified
● 100 krad
DESCRIPTION
Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number Product summary Qualification system Agency specification 2N2907ARUBx 2N2907AUBx SOC2907ARHRx SOC2907AHRx ESCC Flight ESCC Flight ESCC Flight ESCC Flight 5202/001 5202/001 5202/001 5202/001 Note: See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6095 - Rev 15 - December 2024 For further information contact your local STMicroelectronics sales office. 1 Note: Electrical ratings For PNP transistor voltage and current polarity is reversed.
