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AM1517-012 - SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS

General Description

The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5

1.7 GHz frequency range.

The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions.

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AM1517-025 RF & MICROWAVE TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) hermeticallysealed ORDER CODE AM1517-012 BRANDING 1517-12 PIN CONNECTION DESCRIPTION The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 − 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system.