Datasheet Details
| Part number | AM1517-012 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 87.29 KB |
| Description | SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1517-012_STMicroelectronics.pdf |
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Overview: AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .
| Part number | AM1517-012 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 87.29 KB |
| Description | SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1517-012_STMicroelectronics.pdf |
|
|
|
The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 − 1.7 GHz frequency range.
The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions.
The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system.
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