AM1517-012
AM1517-012 is SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The AM1517-012 power transistor is designed specifically for Satellite munications applications in the 1.5
- 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system. The AM1517-012 is supplied in the AMPAC™ Hermetic/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤100°C)
27 1.25 30 200
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 5.5 °C/W
- Applies only to rated RF amplifier operation
September 1992
1/6
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO ICBO h FE
IC = 4m A IE = 4m A VCB = 28V VCE = 5V
IE = 0m A IC = 0m A IC = .8A
45 3.0
- 15
- -
- -
- - 1 150
V V m A
- DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT ηc GP
Note: f = 1.5
- 1.7GHz f = 1.5
- 1.7GHz f = 1.5
- 1.7GHz = = =
PIN = 1.7W PIN = 1.7W PIN = 1.7W
VCC = 28V VCC = 28V VCC = 28V
12 55 8.5
13 58
- -
- -
W % d...
