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BULD742C
High voltage fast-switching NPN power transistor
Features
■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
3 1 DPAK
Figure 1. Internal schematic diagram
Table 1.
BULD742C Datasheet
