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GP14NC60KD - STGP14NC60KD

General Description

These devices are very fast IGBTs developed using advanced PowerMESH™ technology.

This process guarantees an excellent trade-off between switching performance and low on-state behavior.

Key Features

  • Low on voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross-conduction susceptibility).
  • Very soft ultrafast recovery antiparallel diode.
  • Short-circuit withstand time 10 μs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 3 12 Figure 1: Internal schematic diagram Features  Low on voltage drop (VCE(sat))  Low Cres / Cies ratio (no cross-conduction susceptibility)  Very soft ultrafast recovery antiparallel diode  Short-circuit withstand time 10 μs Applications  High frequency inverters  SMPS and PFC in both hard switch and resonant topologies  Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.