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M28F101 - 1 Mb FLASH MEMORY

Datasheet Summary

Description

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.

It is organised as 128K bytes of 8 bits.

It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.

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Datasheet preview – M28F101

Datasheet Details

Part number M28F101
Manufacturer STMicroelectronics
File Size 194.53 KB
Description 1 Mb FLASH MEMORY
Datasheet download datasheet M28F101 Datasheet
Additional preview pages of the M28F101 datasheet.

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Full PDF Text Transcription

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M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 07h DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.
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