Datasheet Details
| Part number | M28F101 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 194.53 KB |
| Description | 1 Mb FLASH MEMORY |
| Datasheet | M28F101-STMicroelectronics.pdf |
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Overview: M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION –.
| Part number | M28F101 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 194.53 KB |
| Description | 1 Mb FLASH MEMORY |
| Datasheet | M28F101-STMicroelectronics.pdf |
|
|
|
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.
It is organised as 128K bytes of 8 bits.
It uses a mand register architecture to select the operating modes and thus provides a simple microprocessor interface.
| Part Number | Description |
|---|---|
| M28F102 | 1 Mbit Flash Memory |
| M28F201 | 2 Mb FLASH MEMORY |
| M28F256 | 256 Kbit Flash Memory |
| M28F512 | 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |
| M28010 | 1-Mbit 128K x 8 Parallel EEPROM |
| M28010-S | 1-Mbit 128K x 8 Parallel EEPROM |
| M28010-W | 1-Mbit 128K x 8 Parallel EEPROM |
| M28256 | 256 Kbit 32Kb x8 Parallel EEPROM |
| M28C16 | 16K (2K x 8) PARALLEL EEPROM |
| M28C16A | 16 Kbit (2K x 8) Parallel EEPROM |