M28F102 Datasheet | STMicroelectronics

.DataSheet.co.kr 1 Mbit (64Kb x16, Bulk) Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES OTP PATIBLE PACKAGES and PINOUT INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION - Defectivity below 1ppm/year ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Device Code: 0050h PLCC44 (K) TSOP40 (N) 10 x 14mm Figure 1. Logic Diagram DESCRIPTION The M28F102 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by word. It is organised as...