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M28F512 - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory

General Description

The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.

It is organised as 64K bytes of 8 bits.

It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER EXTENDED TEMPERATURE RANGES 32 1 PDIP32 (B) PLCC32 (C) DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment.