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M28F512 - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory

Datasheet Summary

Description

The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.

It is organised as 64K bytes of 8 bits.

It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface.

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Datasheet Details

Part number M28F512
Manufacturer STMicroelectronics
File Size 178.46 KB
Description 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
Datasheet download datasheet M28F512 Datasheet
Additional preview pages of the M28F512 datasheet.

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Full PDF Text Transcription

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER EXTENDED TEMPERATURE RANGES 32 1 PDIP32 (B) PLCC32 (C) DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment.
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