M28F201 Datasheet | STMicroelectronics

2 Mb (256K x 8, Chip Erase) FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Active Current: 15mA typical - Stand-by Current: 10µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP PATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code: F4h PLCC32 (K) Figure 1. Logic Diagram TSOP32 (N) 8 x 20 mm DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a...