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M28F201 - 2 Mb FLASH MEMORY

General Description

The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte.

It is organised as 256K bytes.

It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface.

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📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
M28F256 256 Kbit Flash Memory
M28F101 1 Mb FLASH MEMORY
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M28F512 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28010 1-Mbit 128K x 8 Parallel EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M28F201 2 Mb (256K x 8, Chip Erase) FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: F4h PLCC32 (K) Figure 1. Logic Diagram TSOP32 (N) 8 x 20 mm DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes.