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M28F256 - 256 Kbit Flash Memory

General Description

The M28F256 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by byte.

It is organised as 32 Kbytes of 8 bits.

It uses a command register architectureto select the operatingmodes and thus provides a simple microprocessor interface.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M28F256 256 Kbit (32Kb x8, Bulk) Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: A8h 32 1 PDIP32 (B) Logic Diagram DATA BRIEFING PLCC32 (C) DESCRIPTION The M28F256 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by byte. It is organised as 32 Kbytes of 8 bits. It uses a command register architectureto select the operatingmodes and thus provides a simple microprocessor interface.