STMicroelectronics MASTERGAN7
The MASTERGAN7 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a highvoltage, high frequency gate driver. The integrated power GaNs have typical RDS(ON) of 270 mΩ and 650 V drain source blocking voltage. The MASTERGAN7 features linear regulators on both the lower and upper driving sections to optimize driving efficiency.| Part No. | MASTERGAN7 |
|---|---|
| Datasheet | MASTERGAN7 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V GaN half-bridge |
| Buy | Stock & Price |
FEATURES
● Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gate driver● 270 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 6 A
● Linear regulators to regulate high-side and low-side driver supply voltage
● Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
● Very fast wake-up time of high-side driver
● Externally adjustable turn-on resistors
● UVLO protection on VCC and high-side driver supply voltage
● Interlocking function
● Dedicated pins for standby and shutdown with fault pin for remote signal
● 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
● Thermal shutdown protection Application
● Battery chargers and adapters
● Solar inverters
● Resonant converters
● High-voltage DC-DC converters (Buck, Buck-boost)
● High-voltage PFC, including totem pole configuration
DESCRIPTION
The high side of the embedded gate driver can be supplied by the integrated bootstrap diode. The interlocking function avoids crossconduction conditions.
