SCT055W65G3-4AG Datasheet | STMicroelectronics

Features Order code SCT055W65G3-4AG VDS 650 V RDS(on) typ. 58 mΩ ID 30 A Hi P247-4 2 34 1 Drain(1, TAB) - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Very high operating junction temperature capability (TJ = 200 °C) - Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 - DC/DC converter for EV/HEV - Main inverter (electric traction) - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT055W65G3-4AG Product summary Order code SCT055W65G3-4AG Marking SCT055W65G3 Package Hi P247-4 Packing Tube DS14270 - Rev 3 - February 2025 For further information, contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum...