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SCT055W65G3-4AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

  • Order code SCT055W65G3-4AG VDS 650 V RDS(on) typ. 58 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB).
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Source sensing pin for increased efficiency Gate(4) Driver source(3).

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SCT055W65G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HiP247-4 package Features Order code SCT055W65G3-4AG VDS 650 V RDS(on) typ.
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