STMicroelectronics SCT50N120
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCT50N120 |
|---|---|
| Datasheet | SCT50N120 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 65A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247 3 2 1 D(2, TAB)● Very low RDS(on) over the entire temperature range
● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● AC-DC converters● DC-DC converters
● Motor drives
● Solar inverters (string and central)
● Uninterruptable power supplies (UPS) G(1) S(3)
DESCRIPTION
AM01475v1_noZen The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT50N120 Product summary Order code SCT50N120 Marking SCT50N120 Package HiP247 Packing Tube DS11107 - Rev 5 - March 2025 For further information, contact your local STMicroelectronics sales office. SCT50N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source vo...
