STAP57060 Description
The STAP57060 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz.
STAP57060 Key Features
- Excellent thermal stability mon source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-