STMicroelectronics STAP57060
The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz.STAP57060 Specifications
- Min Breakdown Voltage : 65V
- Terminals : 2
- Max Power Dissipation : 79W
- Max Operating Temp : 165°C
Source:
Octopart
| Part No. | STAP57060 |
|---|---|
| Datasheet | STAP57060 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
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● Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package
DESCRIPTION
STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optmized for RF needs and offers excellent performances and ease of assembly. Mounting recommendations are available in (look for application note AN1294) GATE SOURCE Figure 1. Pin connection DRAIN Table 1. Device summary Order codes STAP57060 Package STAP1 Packaging Tube May 2009 Doc ID 15708 Rev 1 1/16 16 Contents STAP57060 1 Contents Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 2.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
